Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys

ABSTRACT

This invention describes a method of building complementary logic circuits using junction field effect transistors in silicon. This invention is ideally suited for deep submicron dimensions, preferably below 65 nm. The basis of this invention is a complementary Junction Field Effect Transistor which is operated in the enhancement mode. The speed-power performance of the JFETs becomes comparable with the CMOS devices at sub-70 nanometer dimensions. However, the maximum power supply voltage for the JFETs is still limited to below the built-in potential (a diode drop). To satisfy certain applications which require interface to an external circuit driven to higher voltage levels, this invention includes the structures and methods to build CMOS devices on the same substrate as the JFET devices.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No. 11/261,873 filed Oct. 28, 2005, which is hereby incorporated herein by reference.

TECHNICAL FIELD OF THE INVENTION

The invention relates in general to integrated circuits and devices, in particular to MOS transistors and Junction Field Effect Transistors (JFETs) and circuits.

BACKGROUND OF THE INVENTION

Very Large Scale Integrated Circuits are being scaled to smaller dimensions to gain greater packing density and faster speed in a continuation of the trend of the past thirty years. Currently, CMOS technology is being manufactured with sub-100 nanometer (nm) minimum dimensions in 2005. Scaling CMOS with the minimum line width below 100 nm presents numerous problems to designers of integrated circuits. A few of the problems of the scaled CMOS transistors below 100 nm are highlighted below;

-   -   1. Power dissipation in CMOS is a big problem due to the high         switching load caused by the increase in gate capacitance per         unit area as the thickness of the gate dielectric is scaled.     -   2. The thickness of the gate dielectric used in the MOS         transistor has been scaled down to less than 20 angstroms.         Thinning of the gate dielectric has resulted in a significant         amount of current through the gate dielectric as voltage is         applied to the gate electrode. This current is termed the gate         leakage.     -   3. The transistors conduct a finite current between the drain         and source even when the gate voltage is reduced to zero. This         current is termed the source drain leakage.     -   4. The result of the effects described above is CMOS circuits         which conduct a significant amount of current even when there is         no activity (static current); this undermines a key advantage of         CMOS. Because of the static current, the static power, or the         power dissipated by the CMOS chip when there is no activity, has         become quite large, and at temperatures close to 100 degrees         centigrade, the static power dissipation can become nearly equal         to the dynamic power dissipation in CMOS circuits. As the CMOS         technology is scaled to 65 nm, the problem of leakage is         becoming more severe. This trend continues as the technology is         scaled further to line widths of 45 nm and below.     -   5. The lateral scaling of CMOS design rules has not been         accompanied by vertical scaling of feature sizes, resulting in         three dimensional structures with extreme aspect ratios. For         instance, the height of the polysilicon gate has decreased only         50% while the lateral dimension of the polysilicon gate has been         reduced by over 90%. Dimensions of the “spacer” (a component of         a CMOS transistor which separates the gate from the heavily         doped source and drain regions) are dependent upon the height of         the polysilicon, so it does not scale in proportion to the         lateral dimensions. Process steps which are becoming difficult         with scaling of vertical dimensions include formation of shallow         source and drain regions, their silicidation without causing         junction leakage, and etching and filling of contact holes to         the source and drain regions.     -   6. It is well known to those skilled in the art to measure power         supply leakage current as an effective screen for detecting         defects introduced in the fabrication of the device. This method         is sometimes referred to as the I_(ddq) test by those skilled in         the art. This method is effective for CMOS with the minimum line         width above 350 nm. Scaling CMOS with the minimum line width         below 350 nm increases the inherent leakage current to levels         comparable to defect induced leakage current, rendering the         I_(ddq) test ineffective. Biasing the well voltage of the MOS         device to eliminate the inherent leakage current introduces new         elements of leakage such as gate leakage, junction tunneling         leakage, etc.

The prior art in junction field effect transistors dates back to the 1950s when they were first reported. Since then, they have been covered in numerous texts such as “Physics of Semiconductor Devices” by Simon Sze and “Physics and Technology of Semiconductor Devices” by Andy Grove. Junction field effect devices were reported in both elemental and compound semiconductors. Numerous circuits with junction field effect transistors have been reported, as follows;

such as:

-   Nanver and Goudena, “Design considerations for Integrated     High-Frequency p-Channel p-JFETs”, IEEE Transactions Electron     Devices, vol. 35, No. 11, 1988, pp. 1924-1933. -   O. Ozawa, “Electrical Properties of a Triode Like Silicon Vertical     Channel JFET”, IEEE Transcations Electron Devices, vol. ED-27, No.     11, 1980, pp. 2115-2123. -   H. Takanagi and G. Kano, “Complementary JFET Negative-Resistance     Devices”, IEEE Journal of Solid State Circuits, vol. SC-10, No. 6,     December 1975, pp. 509-515. -   A. Hamade and J. Albarran, “A JFET/Bipolar Eight-Channel Analog     Multiplexer”, IEEE Journal of Solid State Circuits, vol. SC-16, No.     6, December 1978. -   K. Lehovec and R. Zuleeg, “Analysis of GaAs FET's for Integrated     Logic”, IEEE Transaction on Electron Devices, vol. ED-27, No. 6,     June 1980.

In addition, a report published by R. Zuleeg titled “Complementary GaAs Logic”, dated 4 Aug., 1985 is cited as prior art. The authors have also published the material in Electron Device Letters in 1984 in a paper titled “Double Implanted GaAs Complementary JFETS”.

A representative structure of a conventional n-channel JFET is shown in FIG. 8. The JFET is formed in an n-type substrate 810. It is contained in a p-well region marked 815. The body of the JFET is shown as 820, which is an n-type diffused region containing source (832), channel (838), and drain (834) regions. The gate region (836) is p-type, formed by diffusion into the substrate. Contacts to the source, drain, and gate regions are marked as 841, 842, and 840, respectively. The critical dimension of the JFET is the gate length, marked as 855. It is determined by the minimum contact hole dimension 850, plus the necessary overlap required to ensure that the gate region encloses the gate contact. The gate length 855 is significantly larger than 850. This feature of construction of the prior art JFET limits the performance of these devices, since channel length is substantially larger than the minimum feature size. In addition, the capacitances of the vertical sidewalls of the gate diffusion to drain and source regions 861 and 862 respectively are also quite large. The gate-drain sidewall capacitance forms the Miller capacitance, a term known to those skilled in the art, and significantly limits the performance of the device at high frequencies.

Accordingly, it is desirable to have an integrated circuit and device structure as well as a method for fabrication to address the above mentioned problems as the geometry continues to scale down. Optionally, it is also desirable to fabricate this new integrated circuit and device structure using a method similar to that for fabricating CMOS devices to take advantage of the existing facility and equipment infrastructure.

SUMMARY OF THE INVENTION

This invention describes a method of building complementary logic circuits using Junction Field Effect Transistors (JFETs) in silicon. This invention is ideally suited for deep submicron dimensions, preferably below 65 nm.

In order to address the problems of the current CMOS and junction field effect transistor technology as mentioned in the section above, this invention describes a system of semiconductor devices to remedy these problems, especially at minimum feature sizes of 65 nm and below. This invention describes multiple methods and structures to build the semiconductor devices and circuits which are similar to those used for CMOS devices. This feature of the invention allows it to be inserted in the existing VLSI design and fabrication flow without any significant change in the overall system for designing and fabricating VLSI circuits. The main attributes of the invention are as follows;

-   -   1. It allows significant reduction in the power dissipation of         the circuit.     -   2. It allows significant reduction in the gate capacitance.     -   3. It allows significant reduction in the leakage current at the         gate.     -   4. It allows significant reduction in the leakage current         between source and drain.     -   5. It allows significant simplification of the VLSI         manufacturing process.     -   6. It leverages the design infrastructure developed for CMOS         technology. It is contemplated that all complex logic functions         available in prior art CMOS cell library can be implemented with         the device of the present invention. These complex logic         functions include but not limited to inverter, nand, nor, latch,         flip-flop, counter, multiplexer, encoder, decoder, multiplier,         arithmetic logic unit, programmable cell, memory cell,         micro-controller, JPEG decoder, and MPEG decoder.     -   7. It leverages the existing manufacturing and test         infrastructure used for CMOS.     -   8. It allows the method of measuring power supply leakage         current as an effective screen for detecting defects introduced         in the fabrication of the device.

The basis of this invention is a complementary Junction Field Effect Transistor (JFET) which is operated in the enhancement mode. As is known to those skilled in the art, enhancement mode, it implies that the transistor is in the “OFF” state when the potential between the gate and the source terminals is zero. In this state, there is little or no current flow between drain and source when a positive (negative) bias is applied at the drain terminal of the n-channel (p-channel) JFET. As the potential at the gate is increased (decreased), the n-channel (p-channel) JFET enters the high conduction regime. In this mode, a finite current flows between the drain and the source upon application of positive (negative) bias at the drain. The limitation of traditional enhancement mode JFET devices is that their current drive is limited by the maximum gate voltage, which is less than one diode drop. A gate voltage in excess of one diode drop (the built-in potential) turns on the gate-channel diode which is an undesirable mode of operation for the JFET. This limitation is resolved in the present invention by limiting the biasing voltage, V_(DD), to less than one diode drop. The problem of low current drive of the JFET is addressed by scaling the channel length of the JFET to sub-100 nanometer dimensions. When the JFET gate length is less than 70 nanometers and the power supply voltage is 0.5V, the current output of the complementary JFET devices and the switching speed of the inverters made with the complementary JFET devices compare favorably with conventional CMOS devices.

It should be noted that although the speed-power performance of the JFETs becomes comparable with the CMOS devices at sub-70 nanometer dimensions, the maximum power supply voltage for the JFETs is still limited to below a diode drop. To satisfy certain applications which require an interface to an external circuit driven to higher voltage levels, this invention includes the structures and methods to build CMOS devices also. The CMOS devices described in this invention differ from conventional CMOS along the following points;

-   -   1. CMOS is integrated with complementary JFETs.     -   2. In one embodiment of the invention, CMOS is built without any         “spacer”.     -   3. In the above embodiment of the invention, contacts to the         CMOS terminals are planar, or at the same level, which improves         the manufacturability of the devices.     -   4. Other salient features of this CMOS device have been         described above.

BRIEF DESCRIPTION OF DRAWINGS

So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.

It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the present invention may admit to other equally effective embodiments.

FIG. 1 is a diagram illustrating a complementary JFET inverter.

FIG. 2A is a diagram of a complementary JFET inverter with the well tied to the source.

FIG. 2B is a diagram of a complementary JFET inverter with the well tied to the gate.

FIG. 2C is a diagram of a complementary JFET inverter with the well tied to an external pad.

FIG. 3A is a diagram of the layout of a JFET.

FIG. 3B is a diagram of the cross section of a poly gate JFET corresponding to FIG. 3A.

FIG. 3C is a graph showing the doping profile of a JFET through the gate and the channel.

FIG. 4 is a cross section of a poly gate JFET similar to a conventional MOSFET.

FIG. 5 is a cross section of a poly gate planar JFET with all the contacts made through polysilicon.

FIG. 6 is a cross section of a poly gate planar JFET with the channel region grown epitaxially.

FIG. 7 is a cross section of a poly gate planar JFET with the channel region grown epitaxially and the polycrystalline semiconductor alloy gate comprising carbon, silicon, and germanium.

FIG. 8 is a cross section of a conventional n-channel JFET.

FIG. 9 is a flow chart of building the complementary JFET structure as shown in FIG. 5. Each step of the flow chart is further illustrated in FIGS. 10-20.

FIG. 10 is the cross section of the silicon wafer after the formation of the isolation region.

FIG. 11 is the cross section of the silicon wafer after the formation of the n-well and the p-well.

FIG. 12A is the cross section of the silicon wafer after the formation of the channel region of n-JFET.

FIG. 12B is the cross section of the silicon wafer after the formation of the channel region of the JFET.

FIG. 13 is the cross section of the silicon wafer after polysilicon deposition and selective doping of polysilicon.

FIG. 14 is the cross section of the silicon wafer after deposition of a protective coating on the polysilicon layer.

FIG. 15 is the cross section of the silicon wafer after polysilicon definition by photolithography and etching.

FIG. 16A is the cross section of the silicon wafer after doping the link region between the gate and the drain/source of the p-channel JFET.

FIG. 16B is the cross section of the silicon wafer after doping the link region between the gate and the drain/source of the n-channel JFET.

FIG. 17 is the cross section of the silicon wafer after filling the empty space between the polysilicon structures and then performing planarization.

FIG. 18 is the cross section of the silicon wafer after formation of self aligned silicide on the exposed polysilicon surfaces.

FIG. 19 is the cross section of the silicon wafer after deposition of the dielectric layer on polysilicon and the subsequent etching of contact holes.

FIG. 20 is the cross section of the silicon wafer after metal deposition and definition.

FIGS. 21-24 describe the formation of a MOS transistor using the process adapted from FIG. 9.

FIG. 21 shows the cross section of the silicon wafer after formation of isolation regions, well structures, threshold implants and gate dielectric. The gate dielectric is grown and etched from the wafer except for regions surrounding the MOS gate region.

FIG. 22 shows the cross section of the silicon wafer after polysilicon deposition, polysilicon doping and formation of a protective layer on top of the polysilicon.

FIG. 23 shows the cross section of the silicon wafer after polysilicon definition.

FIG. 24 shows the cross section of the silicon wafer after the link region is formed between the gate and the source/drain by ion implantation.

FIG. 25 shows the complete flow for forming JFETs and MOSFETs on the same wafer. Each step is further illustrated in FIGS. 26-30.

FIG. 26 shows the cross section of the silicon wafer after the n-well and the p-well have been formed.

FIG. 27 shows the cross section of the silicon wafer after the channel for the JFET is formed.

FIG. 28 shows the cross section of the silicon wafer after the channel for MOS is formed.

FIG. 29 shows the cross section of the silicon wafer after source and drain regions for MOS and JFET are formed.

FIG. 30A shows the cross section of the silicon wafer after the contact holes and metal connections are formed.

FIG. 30B shows the layout of the NMOS and n-JFET after the contact holes and metal connections are formed.

DETAILED DESCRIPTION OF THE INVENTION

The circuit diagram of an inverter built with this invention is shown in FIG. 1. The operating terminal voltages of the two transistors under ON and OFF conditions are shown in Table 1:

TABLE 1 Terminal Voltages at the CFET Gate Under ON and OFF Conditions. Vin Vout FT1 FT2 0 V_(dd) ON OFF V_(dd) 0 OFF ON

The operation of the circuit shown in FIG. 1 is remarkably similar to the operation of the corresponding CMOS circuit. The JFETs operate at voltage levels in this invention which are similar to the voltage levels of the conventional CMOS technology.

The input voltage varies between 0 and V_(dd). The output voltage varies between V_(dd) and 0 in an inverse relationship to the input voltage. Thus, for the two states of the inverter, when the applied voltage at the input terminal is 0 and V_(dd), the output voltage is V_(dd) and zero respectively. This is achieved by the two transistors FT1 and FT2 being switched ON and OFF, as stated in Table 1 above.

As is known to those skilled in the art, JFETs operate by applying a control signal at the gate, which controls the conduction characteristic of the channel between the source and the drain. The gate forms a p-n-junction with the channel. The voltage at the gate with respect to the source controls the width of the depletion region of the gate-to-channel junction. The undepleted part of the channel is available for conduction. Thus, the channel is turned ON and OFF by applying appropriate voltages at the gate and source terminals of the JFET transistor. Current will flow between the source and the drain when the channel is turned ON and the appropriate voltage is applied to the drain.

The JFET transistors FT1 and FT2 in the JFET inverter function in a manner very similar to the MOS transistors in a CMOS inverter. The operation of a CMOS inverter is well known to those skilled in the art. The p-channel JFET (FT1) is connected to the power supply at its source terminal. The n-channel JFET (FT2) is connected to the ground at its source terminal. The drain terminals of the two transistors are connected together and to the output terminal of the gate. The gate of the p-channel JFET FT1 and the gate of n-channel JFET FT2 are connected together and to the input terminal of the gate, as shown in FIG. 1. This circuit configuration is called a CFET inverter in the remainder of this document. In general, gates formed in a similar manner with p-channel and n-channel JFETs are called CFET gates.

The functioning of the inverter is explained in greater detail here in order to reveal the full implementation of the invention. This is accomplished by first explaining the voltages at the source and the drain terminals of the transistor, which are shown in Table 2. In an exemplary and non-limiting illustration, the power supply voltage is fixed at 0.5V.

TABLE 2 Junction voltages for JFETs in CFET Gate FT1 FT2 Vin Vout VGS VDS VGS VDS 0.5 0 0 V −0.5 0.5 0 0 0.5 −0.5 0 0 0.5

The gate of the p-channel JFET is made of n-type silicon and the channel is doped p-type. The doping profile of the p-channel JFET is designed to turn off conduction through the channel when the voltage on the gate terminal is at zero volts relative to the source terminal. This device is an enhancement mode device. This attribute of the p-channel JFET is due to the built-in potential at the p-n-junction between the gate (p-type) and the channel (n-type). Since the source of the FT1 is tied to V_(DD) at 0.5V, the external bias between the n-type channel and p-type gate is 0.0V when the gate of the FT1 is also at 0.5 V. This represents the FT1 in the OFF condition. As the bias at the gate of the p-channel transistor is decreased to 0.0V, the negative voltage between the gate and the source terminals changes to −0.5V, which causes the depletion layer to collapse and allows the flow of current from source to drain. This represents the FT1 in the ON condition.

An important teaching of this invention is how to limit gate current when FT1 is in the ON condition. The channel-to-gate diode is forward biased at 0.5V under this condition, so there is a finite leakage current which flows through the gate of the transistor. It is termed the gate leakage. The magnitude of the gate leakage is controlled by the built-in potential across the gate-channel junction. The built-in potential limits the gate leakage current to a very small amount when this CFET inverter is operated with supply voltages (V_(DD)) at or below 0.5V for silicon-based circuits. Thus, the CFET inverter works in a manner similar to the CMOS inverter in both design and operating characteristics. The limit for supply voltages may be different for other materials because of differences in the built-in potential. Similarly, the bias voltages for the n-channel JFET are reversed; the transistor is turned “OFF’ when the gate-source bias is reduced to zero and it is turned on when the gate-source bias is equal to the supply voltage V_(DD), which is limited to 0.5V in order to restrict the gate current. The gate current of a typical gate-channel junction is projected in the range of 1 uA/cm² to 100 mA/cm². In contrast, for an MOS transistor made with 45 nanometer lithography and appropriately scaled gate dielectric thickness, the gate current is projected to be in excess of 1000 A/cm².

The input capacitance of the JFET transistor is the junction capacitance of the diode formed by the gate-channel terminals. The capacitance of this diode is in the range of 10⁻⁸ F/cm² to 10⁻⁶ F/cm², determined by the thickness of the depletion layer width of the junction, which is in the range of 100 angstroms to 3000 angstroms. The input capacitance of an MOS transistor made with 45 nanometer design rules and 10 angstrom thick oxide is an order of magnitude higher than the corresponding input capacitance of the JFET. This feature makes the JFET extremely attractive from the perspective of low power operation.

The JFET transistors also have a fourth electrical terminal, namely the well. One embodiment of the invention is described here with the well connected to the source terminal for both the JFETs, as shown in FIG. 2A.

FIG. 2B shows an alternate embodiment of the invention, in which the well is tied to the gate and used for modulating the conductivity of the channel from both the top and the bottom.

FIG. 2C shows yet another embodiment of the invention, in which the well of the n-channel JFET is connected to an external terminal, which can be used for applying any signal to the JFET. In yet another embodiment of the invention, the well of the n-channel JFET is left floating. The corresponding description also applies to the p-channel JFET. It is well known to those skilled in the art to measure power supply leakage current as an effective screen for detecting defects introduced in the fabrication of the device. This method is sometimes referred to as the I_(ddq) test by those skilled in the art. This method is effective for CMOS with the minimum line width above 350 nm. Scaling CMOS with the minimum line width below 350 nm increases the inherent leakage current to be comparable to the defect induced leakage current, thus rendering the I_(ddq) test ineffective. For MOS devices with the minimum line width below 100 nm, biasing the well voltage of the MOS device to eliminate the inherent leakage current introduces new elements of leakage such as gate leakage, junction tunneling leakage, etc. In the present invention, biasing the well voltage of the JFET can effectively reduce the inherent leakage current to the pico-ampere range. This makes the I_(ddq) test an effective screen for detecting defects introduced in the fabrication of devices with the minimum line width below 100 nm.

FIG. 3A shows an exemplary and non-limiting layout of the JFET transistor which is used to build this circuit structure. The source, drain, gate and well tap of the n-channel JFET are given by 330, 340, 375, and 368 respectively. The contacts to these terminals are marked by 372, 374, 373, and 371 respectively.

FIG. 3B shows a cross section of the structure of an n-channel JFET which consists of four terminals; source (330), gate (370), drain (340), and p-well (310). The JFET is formed in a region of silicon marked as 315. The JFET is isolated from the surrounding semiconductor by regions marked as 320; these are filled with an insulating material such as silicon dioxide. The channel between the source and drain is shown as object 350. For the n-channel JFET, the source and drain are highly doped n-type regions formed by doping silicon with donor type impurities such as phosphorous, arsenic or antimony. The well is doped by acceptor impurities such as boron or indium. The channel is a narrow region which is doped n-type connecting source and drain. The gate is a shallow p-type region 370 formed within the channel by methods such as diffusion of dopants from the heavily p+ doped polysilicon region 375.

A doping profile of the transistor at varying depths from the silicon surface through the gate (370) and channel (350) is shown in FIG. 3C. The curve 381 is an exemplary doping profile of the gate region starting from the silicon surface. Curves 382, 383, and 384 represent the doping profile of the channel, well, and the bulk regions. For the n-JFET, 381 is the doping profile of the p-type gate region, 382 is the profile of the n-type channel region, 383 is the profile of the p-type well region, and 384 is the profile of the surrounding n-type bulk region. The gate-channel junction is given by 385, the channel-well junction is given by 386, and the well-bulk region junction is given by 387. The depth of the junction between gate and channel from the surface of silicon (385) is less than the depth of the junction between the channel and the p-well (386).

This invention also teaches other methods for forming the p-type gate junction, such as ion-implantation. This invention also covers other methods to dope the gate, such as plasma immersion implant, as is well known to those skilled in the art.

In FIG. 3B, the region 375 is a slab of polysilicon which is doped heavily p-type and acts as the source for doping of the gate 370. The p-type gate is used to control the conduction across the channel from source to drain. By this novel construction technique, the gate is diffused in the channel region from heavily doped polysilicon which also forms an ohmic contact with the gate. This allows the polysilicon to be used to connect the gate to the external circuit.

The ohmic contact to the well is made by the well tap marked as object 368. The contacts to the four terminals of the JFET, namely well, source, gate, and drain are shown in FIG. 3B also, as objects 371, 372, 373, and 374, respectively. The region underneath the p-well tap 368 is doped heavily with p-type impurities to make good ohmic contact. The p-well 310 is formed in an n-well marked as 315 for applications where the p-well of the JFET has to be isolated. For applications where the p-well is connected to the ground potential, the need for the n-well is obviated. This invention covers both of these cases.

The doping types are reversed for the p-channel JFET in relation to those described in FIGS. 3B and 3C, i.e. the p-type regions are replaced by n-type regions and vice versa. It should be pointed out that the novelty of the invention of doping the gate of the JFET with polycrystalline silicon 375 is maintained for the p-channel JFET also.

An alternate embodiment of the JFET is shown in FIG. 4. This figure shows the cross section of an n-channel JFET, which is very similar to an MOS transistor. The structure of the n-channel is described here. It is implied that this structure will also be replicated for the p-channel JFET with appropriate changes in doping, as described in the paragraph above. The JFET is shown as object 400. The p-well in which the JFET is formed is marked as object 310. The isolation for the JFET is provided by a region filled with an insulating material such as silicon dioxide or other suitable materials in object 320. This structure is similar to the corresponding structure shown in FIG. 3. The heavily doped n-type regions form the source and drain region and are marked 420 and 430, respectively. The channel region between source and drain is lightly doped n-type and is marked 450. The gate region is doped p-type and is marked 440. This region is diffused from the polysilicon with heavy p-type doping marked as 460. Optionally the gate region 440 is of a lithographic minimum dimension. The silicide layer 462 overlaying a top surface of the gate electrode region 460, the gate electrode region 460, the gate region 440, and the channel region 450 have substantially the same length. The length difference of the gate region 440 and the channel region 450 between the source region 420 and the drain region 430 is formed from lateral diffusion of the source region 420 and the drain region 430; and lithographic misalignment does not contribute to said length difference. An insulating region marked 465 is inserted here, surrounding the gate, consisting of a combination of silicon dioxide and nitride layers. This object is called a “spacer” in this document. In an embodiment of the invention, top surfaces of the regions 420, 430, 460 and 368 are covered with a highly conducting layer of one of the metallic compounds called silicides, marked as 462. The silicide layer is self aligned to the well tap, source, drain, and gate regions, implying that the silicide is formed only in the regions where there is exposed silicon or polysilicon. The major purpose served by the spacer is that it isolates the source and drain regions from the gate region when self aligned silicides are formed. It also allows efficient distribution of current from the contact inside the device. The contacts to the well tap, source, drain, and gate regions are done in a manner similar to that in FIG. 3, and are marked as 371, 372, 373, and 374, respectively.

In an alternate embodiment of the JFET, as shown in FIG. 5, contacts to all the terminals of the JFET, namely source, gate, drain, and well, are all made with polysilicon. This structure has the desirable attribute of having contacts to all terminals at the same level. The n-channel JFET is made in a p-well marked 310, which is isolated from all sides by an insulated region 320. This structure is similar to the corresponding structure shown in FIG. 3. The source of the JFET is formed by a combination of heavily n-doped regions 520 and 522. The drain of the JFET is also formed by a combination of heavily doped n-type regions 524 and 526. The channel 550 is a shallow n-type doped region between drain and source. The p-type gate region diffused in silicon is marked as 540. Blocks 530 and 532 are heavily n-type polysilicon doped regions. The region 520 is formed by diffusing n-type impurities from the polysilicon into the silicon. Similarly, region 524 is formed by diffusion of n-type impurities from the polysilicon region 532 into the silicon. The gate region 540 is formed by diffusion of the p-type impurities from the p-type polysilicon 560 into the silicon. The regions 522 and 526 connect the source and the drain regions 520 and 524, respectively, to the channel 550. The polysilicon regions marked as 530, 532 and 560 are in ohmic contact with regions 520, 524, and 540 respectively. The regions 522 and 526 are formed by external doping such as ion implantation, plasma immersion implantation, or other similar doping methods. The well tap is formed by ohmic contact between the heavily p-doped polysilicon 562 and the p-type region 368. The contacts to the transistor are made at the top of the objects 530, 532 and 560 and 562. In order to reduce ohmic contact resistance of these regions, self aligned silicide is formed on top of the polysilicon layer, marked as 580. In an alternate embodiment of this invention, contacts to the terminals of the transistor are made directly to the polysilicon.

In an alternate embodiment of this invention, the top surface of the silicon substrate is formed by epitaxial deposition of silicon-germanium alloy, which is doped appropriately to form the channel and the gate, shown in FIG. 6. The structure is built-in a well 310 with isolation regions 320. The major feature of this embodiment is that the channel of the JFET is formed on an epitaxially deposited layer of silicon-germanium alloy marked as object 670. The mobility of the silicon-germanium alloy is much higher than silicon, which increases the performance of the JFET, especially at high frequencies. This epitaxial layer is deposited on the transistor after the formation of the isolation structure on the wafer. The epitaxial layer is deposited selectively in this embodiment only on the islands where the channel is to be formed. The epitaxial layer for the channel of the n-JFET is deposited in one step, and the epitaxial layer for the channel of the p-JFET is deposited in the next step. In another embodiment, the epitaxial layer is deposited on the wafer prior to the formation of the isolation structure. In yet another embodiment of this invention, the channel region is formed by a strained silicon-germanium alloy. Another embodiment of the invention teaches the use of silicon-germanium-carbon to build the channel region of the JFETs. The terms silicon-germanium alloy and strained alloys are well known to those skilled in the art. The silicon-germanium alloy is formed by deposition of a mixture of silicon and germanium atoms epitaxially on the silicon substrate. The remaining structure of the JFET is similar to the structure shown in FIG. 5. The doping of the epitaxially deposited channel is controlled by external doping, such as ion implantation. Alternately, the epitaxially deposited material is doped during deposition by methods such as atomic layer epitaxy and similar techniques. The epitaxial deposition steps are also applicable to the JFET structures shown in FIGS. 3 and 4.

Another embodiment of this invention, shown in FIG. 7, involves the use of a high band gap material such as silicon carbide or silicon-germanium carbide to form the gate contact region 744. This feature is implemented in this invention in order to increase the barrier height at the p-n junction formed at the gate 640-channel 650 junction. The high band gap material of the gate contact region 744 in proximity to the gate region 640 effectively increases the barrier height at the p-n junction formed at the gate 640-channel 650 junction. The higher gate-channel junction built-in potential reduces the saturation current across the junction, and allows an increase in the maximum voltage which can be applied to the gate-channel diode to forward bias it without causing a significant amount of gate current to flow across the diode. Since the maximum voltage at the gate is equal to the power supply voltage of the inverter, a higher power supply voltage becomes possible, increasing the drive strength of the transistors and resulting in faster switching of the inverter. As shown in FIG. 7 for this embodiment, the polycrystalline silicon carbide material is used in place of polysilicon to form the electrodes. The use of a high band gap material such as polycrystalline silicon carbide reduces the leakage current of the gate junction when the gate-channel diode is weakly forward biased during the ON state of the transistor. This invention teaches the use of various phases of silicon carbide for this purpose, namely 3C, 4H, and 6H. Further, this invention teaches the use of various other electrode materials which can be used to form a rectifying junction with the silicon substrate, including ternary alloys of silicon-germanium-carbon and various other compound semiconductors such as gallium-aluminum-arsenide-phosphide. In an alternate embodiment of the invention, use of materials for the gate such as silicon carbide is made along with epitaxially deposited high mobility materials such as silicon-germanium at the same time. The composition of the gate material is varied during deposition. The electrode extensions for source, drain, gate, and well tap, marked as 730, 732, 744, and 752, are made of high band gap semiconductor material such as silicon carbide. A self aligned conducting layer is formed on the top of these electrodes and is marked as 750. The polycrystalline semiconducting materials are doped appropriately, as described in the previous paragraphs. The other components of the transistors remain similar to the n-JFET structure described in FIG. 6.

An exemplary embodiment of the invention teaches the use of a silicon-carbide layer near the surface of the silicon to a depth ranging from 10 Å to 1000 Å, followed by deposition of polysilicon to a depth of 10 Å to 2500 Å. The composition of the polycrystalline layer is varied to facilitate accurate monitoring of the etching process, in which the polycrystalline material is etched fast until the composition marking the bottom of the layer is detected and then slowly with a selective etching process until all the polycrystalline material is etched. Detailed explanation of the fabrication process using polycrystalline silicon carbide is explained later in this document.

Next, an exemplary but non-limiting method of building the complementary JFET structure as shown in FIG. 5 is illustrated as the flow chart in FIG. 9. Each step in the flow chart is further illustrated in FIGS. 10-20. Step 905 is illustrated in FIG. 10. Step 910 is illustrated in FIG. 11. Step 915 is illustrated in FIG. 12. Step 920 and 925 are illustrated in FIG. 13. Step 930 is illustrated in FIG. 14. Step 935 is illustrated in FIG. 15. Step 940 is illustrated in FIG. 16. Step 950 is illustrated in FIG. 17. Step 955 is illustrated in FIG. 18. Step 960 is illustrated in FIG. 19. Step 965 is illustrated in FIG. 20.

FIG. 10 shows the cross sectional view of a semiconductor substrate after the preliminary steps during the fabrication have been completed to achieve the isolation of the various regions where active devices will be formed by a combination of etching, thermal oxidation and deposition of silicon dioxide. Regions 1001-1005 represent the regions which are filled with insulating material consisting of silicon oxide and nitride by a combination of etching, deposition and thermal growth. The details of the process for the formation of these regions are well known to those skilled in the art and are beyond the scope of this disclosure. Regions 1011-1014 represent regions where active transistors are formed in the subsequent steps.

FIG. 11 shows the formation of n-wells and p-wells by doping the active regions with appropriate impurities in regions 1101 and 1102. For the n-wells in region 1102, phosphorous or arsenic atoms are implanted. The doping level of the implant varies between 1.0×10¹¹/cm² to 1.0×10¹⁴/cm². The energy of implantation varies between 10 KeV and 400 KeV. For the p-wells in region 1101, boron is introduced by ion implantation with a dose varying between 1.0×10¹¹/cm² and 1.0×10¹⁴/cm² and with the energy of implantation varying between 10 KeV and 400 KeV. Multiple implants may be used, to achieve the desired impurity doping profile. In order to selectively implant regions with n-type and p-type impurities, implants are done using photoresist masks to shield the region not designed to receive the implant. Additional implants of boron are done under the isolation regions 1001-1005 to increase the doping in the region underneath the oxide and prevent any leakage between the two adjoining n-wells. The wafers are heat-treated to achieve the desired impurity doping profile.

FIGS. 12A and 12B show the formation of channel regions 1202 for the n-JFET and 1222 for the p-JFET respectively. The channel region is formed by selective implantation using photoresist masks. For the n-JFET, the channel is formed by ion implantation with an n-type dopant such as arsenic, phosphorous, or antimony with an implant dose of 2.0×10¹¹/cm² to 1.0×10¹⁴/cm² and with the implant energy between 1 and 100 KeV, shown as region 1202 in FIG. 12A. Also shown in the figure is the photoresist 1210 covering the regions where the n-channel implant is to be blocked. Region 1222 in FIG. 12B is implanted with p-type impurities such as boron, indium or thallium to form the channel of the p-JFET. In an alternate embodiment of the invention, the channel region is formed by plasma immersion doping. Alternately, the channel is formed by epitaxial growth of the channel region consisting of silicon, silicon-germanium binary alloys, or silicon-germanium-carbon tertiary alloys. This invention teaches the variations in formation of epitaxial regions by selective epitaxial growth of channel regions for n-channel and p-channel, as well as a single deposition of the channel regions for both n-JFET and p-JFET, followed by selective doping. Yet another embodiment of the invention covers the instance in which the channel regions are doped during deposition by methods such as atomic layer epitaxy.

Next, a layer of polysilicon is deposited over the whole wafer, as shown in FIG. 13. The thickness of polysilicon deposited on the wafer varies between 100 Å and 10,000 Å. The polysilicon is selectively doped to form regions which will eventually become the source, drain, gate, and well contacts of the JFETs using photoresist as masks. The details of the photolithographic process are omitted here for the sake of brevity. As shown in 1300, the region marked as 1310 is doped with a heavy boron implant to a dose ranging between 1×10¹³/cm² and 1×10¹⁶ cm^(.) It is designed to act as the contact for the well region of the n-JFET. Region 1314 is designed to act as the gate contact for the n-JFET. It is doped heavily p-type with the parameters similar to those of region 1310. Regions 1312 and 1316 are doped heavily with n-type dopants (phosphorous, arsenic, and antimony) to a dose ranging between 1×10¹³/cm² and 1×10¹⁶/cm².

The p-JFET is formed with regions 1320 and 1324 acting as the source and drain contacts (p-type), respectively, region 1322 as the gate (n-type), and region 1326 as the contact to the well tap (n-type). Regions 1320 and 1324 are doped with a heavy concentration of boron atoms to a dose ranging between 1×10¹³/cm² and 1×10¹⁶/cm² and are designed to act as the source and drain contacts of the p-JFET respectively.

Similarly, regions 1322 and 1326 are doped heavily n-type and are designed to act as gate and well contacts of p-JFET. In an alternate embodiment, a layer of oxide is deposited on top of the polysilicon layer before doing the ion implantation. The thickness of this layer varies between 20 Å and 500 Å. In another embodiment, layers of oxide and nitride are deposited on top of the polysilicon prior to ion implantation, with the thickness of the oxide and nitride films varying between 10 Å and 500 Å.

FIG. 14 shows the cross section of the silicon wafer with the polysilicon layer doped with impurities, and a protective layer 1410 on top of the polysilicon layer. The polysilicon layer with impurities implanted in various regions is used as a source of indirect diffusion of those impurities into the silicon to form the source, drain, and gate junctions and ohmic connections to the well. Regions 1422 and 1426 are the source and drain regions of the n-JFET which are diffused from polysilicon regions 1312 and 1316. Region 1424 is the n-type channel. The gate region, marked as 1428, is diffused into the silicon from the p-doped polysilicon. Region 1420 is the p-type region (well tap) formed in the silicon by diffusion from the polysilicon region 1310 and forms an ohmic contact to the p-well which contains the n-JFET. Similarly, the p-JFET contacts in the silicon are formed by regions 1430 as the source, 1432 as the channel, region 1434 as the drain, region 1436 as the well contact, and region 1438 as the gate region of the p-JFET. In an alternate embodiment, multiple ion implants, varying the implant dose and energy, of n-type and p-type dopants in polysilicon are made to form the well contacts, source, drain, and gate regions.

After diffusion of the various regions of the JFETs into the silicon, the gate patterning process takes place. Using an optical lithographic process, a layer of an anti-reflective coating, followed by a layer of photoresist are coated on the wafer. The thickness of these layers depends upon the selection of the photoresist, as is known to those skilled in the art. The photoresist layer is exposed and various terminals are delineated in the photoresist, marked as 1510 in FIG. 15. Alternate embodiment of this invention includes other methods of patterning the photoresist, including imprint lithography and e-beam lithography. With the photoresist layer as the mask, the protective layer above the polysilicon is etched first. Next, the polysilicon layer is etched, with the grooves such as 1512 reaching the bottom of the polysilicon layer. This step isolates the various terminals electrically, as shown in 1500. For patterning the photoresist, various processes such as optical lithography, immersion lithography, imprint lithography, direct write e-beam lithography, x-ray lithography, or extreme ultraviolet lithography are used.

FIG. 16A is the cross section of the silicon wafer after doping the link region between the gate and the drain/source of the p-channel JFET. After etching the polysilicon layer, the region between the heavily doped regions and the channel are doped to form a low conductivity path between the source and channel, and the drain and channel. It is called the link region (1620, 1622, 1652 and 1654) here.

FIG. 16A shows the formation of the link region for a p-JFET. The section of the wafer containing the n-JFET is covered by photoresist 1610 during this step while a suitable doping process such as ion implantation or plasma immersion implantation is used to dope the link regions of p-JFET 1620 and 1622. The link regions are formed to a junction depth independent from that of the neighboring source and drain regions, and are designed to provide a very low resistivity connection between source/drain and the channel.

FIG. 16B is the cross section of the silicon wafer after doping the link region between the gate and the drain/source of the n-channel JFET. Object 1650 is the photoresist covering the regions where the implant is blocked, which contain the p-JFET. Regions 1652 and 1654 in the silicon are the link regions formed by the implantation of n-type dopants. After ion implantation, the dopants are activated by a rapid thermal annealing process. An oxidation step, at temperatures ranging between 700 C and 950 C and for times ranging between 10 seconds and 20 minutes, is also performed to oxidize the region of silicon damaged during etching.

FIG. 17 shows the cross section of the wafer after the gap between the polysilicon blocks is filled with an insulating material such as silicon dioxide and then processed, using a method such as chemical-mechanical-polishing, to provide a nearly planar surface at the same level as the polysilicon layer. The technique of filling insulating material in between the polysilicon blocks by depositing silicon dioxide using chemical vapor deposition or plasma assisted chemical vapor deposition is one which is widely used in semiconductor manufacturing. One such process employs the deposition of oxide by a low temperature plasma-activated reaction between silane and oxygen in gaseous form. The protective layer 1410 is finally removed to expose the bare polysilicon surface.

FIG. 18 is the cross section of the silicon wafer after formation of self aligned silicide on the exposed polysilicon surfaces. A layer of a metal such as nickel, cobalt, titanium, platinum, palladium, or other refractory metal is deposited on the polysilicon surface and annealed such that the exposed regions of polysilicon form a binary compound with the metal layer known as “metal silicides”. The metal silicide is a very highly conductive substance. The preferred thickness of the deposited metal is between 50 Å and 1000 Å on an atomically clean surface of polysilicon. The wafers are heated in a rapid anneal furnace at temperatures between 200 C and 800 C for a time period between 10 seconds and 30 minutes to form silicides selectively where metal is in contact with a silicon or polysilicon layer. After the reaction between the metal layer and silicon has taken place, the excess metal is removed from the wafer by a chemical etching process which does not affect the silicide layer. Unreacted metal is selectively etched off using appropriate solvents, leaving only metal silicide over the exposed silicon and polysilicon regions 1801. For titanium and cobalt, a mixture of hydrogen peroxide and ammonium hydroxide is used in ratio of 1:0.1 to 1:10 as appropriate at room temperature, although temperatures above room temperatures can also be used. Thus, a self aligned layer of silicide is formed on polysilicon. FIG. 18 shows the cross section of the device after formation of silicide on the polysilicon source, drain, gate, and well tap terminals. This polysilicon layer is also used as a local interconnect, whereby regions of silicided n-type polysilicon and p-type polysilicon are used for making ohmic contacts.

The next process step consists of depositing a dielectric (oxide) layer, etching contact holes in the oxide layer, and forming contact holes for the source, drain, gate and well tap terminals, and continuing with the conventional metal interconnect formation process as practiced in the formation of semiconductor chips. A cross section of the wafer after dielectric deposition and contact hole etch is shown in FIG. 19. The metal deposition and etch is shown in FIG. 20.

This process can be adapted for making MOS transistors along with JFETs. One application of this adaptation is to include CMOS-compatible I/Os on the chip. The process to make MOS transistors is described next. FIG. 21 shows the cross section of a wafer after the formation of the n-wells and p-wells for JFETs and MOSFETs. The threshold (V_(t)) adjust implants for the MOSFETs are also completed. In addition, the formation of channel regions for the JFETs is also completed. A layer of gate dielectric (oxide or nitrogenated oxide) is grown on the wafer. This layer of oxide is etched away from the wafer except in the regions surrounding the gate of the MOSFETs. This oxide layer is shown as object 2110. In an alternate embodiment of this invention, a thin layer of amorphous silicon is deposited on top of the gate dielectric immediately after the oxide is grown. The thickness of this amorphous layer is sufficient to prevent damage to the underlying gate dielectric during the next photomasking and etching step. The preferred thickness of this amorphous silicon layer is between 10 Å and 5000 Å. In an alternate embodiment of the invention, the oxide layer is formed first, and the channel for the JFETs is formed afterwards.

Next, a layer of polysilicon is deposited on the wafer as shown in FIG. 22. The polysilicon layer is covered by a protective layer of oxide marked as 2220. With photolithography to define certain regions on the wafer, a layer of photoresist is selectively removed from the wafer and the exposed areas are implanted with n-type and p-type dopants. This figure shows the polysilicon layer with selectively doped regions. Region 2210 is doped p-type, region 2212 is doped n-type, region 2214 is doped p-type, and region 2216 is doped n-type. The parameters for doping these regions are the same as the parameters described in FIG. 13.

The next step is the definition of the gate and the remaining electrodes on polysilicon, as shown in FIG. 23. It is accomplished by first defining the pattern in a photoresist layer 2330. Next, using the photoresist layer as a mask, the polysilicon layer is etched to define the electrodes. Region 2310 forms the well tap of the NMOS, region 2312 forms the source of the NMOS, region 2314 forms the gate of the NMOS, region 2316 forms the drain of the NMOS, region 2320 forms the source of the PMOS, region 2322 forms the gate of the PMOS, region 2324 forms the drain region of the drain of the PMOS, and region 2326 forms the well tap for the PMOS. After etching the polysilicon layer, a short oxidation cycle is executed to form an oxide on the surface of silicon with a thickness between 20 Å and 500 Å. Additional heat cycles are executed to diffuse the dopants into the silicon from the polysilicon in the drain, source, and the well tap regions while controlling the diffusion of the dopants from the polysilicon into the gate dielectric and into the channel region.

FIG. 24 shows the formation of the link between the source, drain, and channel regions by ion implantation. For NMOS, the links between the source and the channel and the drain and the channel are formed by ion implantation of n-type dopants marked as 2410 and 2412 respectively. For PMOS, the links between the source and the channel and the drain and the channel are formed by ion implantation of p-type dopants marked as 2420 and 2422 respectively. A rapid thermal anneal is carried out to activate the implant. The cross section of the wafer is very similar to the one shown in FIG. 17. The wafer is processed by the method described in FIGS. 17 through 20.

The complete flow for forming JFETs and MOSFETs on the same wafer is shown in FIG. 25. The MOS transistors fabricated in this manner have multiple advantages over the conventional method of building MOS transistors, as described here:

Conventional MOS transistors have a spacer which is used to separate the highly doped source/drain regions from the gate. The dimensions of the spacer are dependent upon the vertical polysilicon dimension and other processing parameters, and are not laterally scalable. The current embodiment of the MOS transistor uses lithography to separate the source/drain and the gate region, making this structure laterally scalable.

Conventional MOS transistors have a lightly doped source and drain region under the spacer, which limits the injection efficiency of the source, or the maximum current which can be controlled by the transistor. The current embodiment of the MOS transistor uses the link region as the source and drain junctions and it allows the doping of this region to be controlled independently.

Conventional MOS transistors have symmetrical source and drain regions. This embodiment allows asymmetrical source and drain junctions to be formed by spacing the source and drain polysilicon contacts from the gate asymmetrically.

Conventional MOS transistors have varying contact depths to the source drain and the gate terminals; the contacts to the source/drain terminals are made directly to silicon while the contact to the gate terminal is made to polysilicon which is elevated from the source/drain junctions. This embodiment of MOS transistors etches all the contact holes to the polysilicon, keeping the depth of all the holes the same.

The conventional MOS transistors have to compromise the short channel performance due to limitations imposed by a shallow source/drain junction and the silicide formation on top of these junctions. This embodiment of the MOS transistors removes this limitation by placing the silicide on top of the polysilicon for all the junctions. Also, the shallow source/drain junction in the silicon is formed by diffusion of dopants from the polysilicon, which is a slower and more controllable process.

This method to build JFETs and MOSFETs allows a planar surface to exist prior to contact hole etch. It also insures that the amount of polysilicon removed is limited, which is important in achieving a uniform plasma etch. It is well known that the variation in the density of the polysilicon pattern on the silicon wafer is responsible for variation in the etch rate of polysilicon. In this method, this problem is overcome by the fact that the pattern density of polysilicon is much higher than in conventional process technology. Also, the contacts to the various junctions are separated by the polysilicon layer, which makes it extremely convenient to form shallow source and drain junctions.

Steps in FIG. 25 are further illustrated in FIGS. 26-30.

FIG. 26 shows the cross section of a silicon wafer after the formation of isolation areas (2610), a p-well for forming NMOS transistors marked as 2601 and another p-well for forming n-JFETs marked as 2602. Corresponding well structures to form PMOS transistors and p-JFETs are also formed but are omitted here for the sake of brevity. After the V, adjust implants are performed in silicon for the MOS transistors, gate oxidation is performed over the whole wafer and a gate dielectric layer of appropriate thickness is grown on the wafer, ranging between 10 Å and 100 Å. It is shown as layer 2620 in this figure. In alternate embodiments of the invention, the gate dielectric is formed with a high dielectric coefficient material such as hafnium silicate and similar materials known to those skilled in the art.

FIG. 27 shows the wafer cross section after the following steps have been executed. First, the gate dielectric is removed by wet etching or a suitable technique such as plasma etching selectively from the regions where the JFET channel is to be formed. Next, the JFET channel is formed by ion implantation, marked as object 2710. After the formation of the channel, a layer of polycrystalline material is deposited on the wafer. It is marked as 2720.

The gate electrodes of the JFET and the MOS transistors are implanted with appropriate dopants. The gate regions of the NMOS transistor and the p-JFET are doped heavily n-type with arsenic, phosphorus, or antimony. The gate electrode regions of the PMOS and the n-JFET are implanted with p-type dopants, namely boron. The gate electrode regions are implanted with a heavy dose of the dopants in the range of 1×10¹⁴/cm² to 1×10¹⁶/cm². An alternate embodiment of the invention includes multiple implant steps for forming the gate electrode region of the MOS and JFET transistors. The wafer is heated to distribute the dopants throughout the polysilicon layer.

A photomask is put on the wafer and the layer of polysilicon is etched to define the gate electrodes for the transistors, as is shown in FIG. 28. Object 2810 forms the gate of the NMOS transistor while the object 2820 forms the gate electrode of the n-JFET transistor. The gate of the NMOS transistor is formed with n-type polysilicon while the gate of the n-JFET is formed with p-type polysilicon. After defining the gate, a short oxidation cycle is executed to remove the damage from the surface of polysilicon. Layers of oxide and nitride are deposited next and etched anisotropically to form spacers adjacent to the gate electrodes. At the end of the spacer formation, the cross section of the wafer shows a gate electrode surrounded by spacers on both sides. The objects marked 2830 are the spacers surrounding the gate. It should be noted here that the polysilicon on the n-JFET islands (object 2602) does not have a layer of oxide underneath to stop the etch. So, the polysilicon etching process has to be conducted very carefully so as not to over-etch the polysilicon and etch into the silicon. Process steps to prevent over-etching the polysilicon have been described earlier in this application.

FIG. 29 shows the cross section of the silicon wafer after the source and drain regions for the MOS and JFET transistors are formed. The process step consists of forming the Lightly Doped Drain (LDD) region for the NMOS transistors. This is done by selective ion implantation of n-type dopants in the NMOS region 2601. This step is also accompanied with an implant of dopant of opposite polarity (p-type) to prevent the depletion regions of drain and source from touching each other, causing a phenomenon known as “punch through”. This step is known as the “anti-punch-through” implant. The LDD and the anti-punch-through implants are performed at angle of incidence on the wafer ranging from perfectly vertical to a tilt of 60% from the vertical. These regions are marked as 2910 in the FIG. 29. A similar process is performed to create a low resistance region (link) between the channel of the JFET and the source and drain regions. The links are formed adjacent to the gate of the JFET, marked as objects 2920. The source and drain regions are formed by ion implantation of n-type impurities for both NMOS and n-JFET transistors. The n-type ion implantation to form source and drain terminals for NMOS is a well established process. For the n-JFET, the doping type of source and drain is opposite to that of the gate. The implant parameters of the source and drain are adjusted to insure that the n-type dopants used for forming these terminals do not invert the polarity of the gate region. The gate doping for the JFET is maintained at a high level by implanting with n- or p-type dopants to a dose of 1×10¹⁴/cm² to 1×10¹⁶/cm². The energy of the implantation is selected based on the polysilicon thickness. The doping of the source and drain of the JFET is kept lower than the gate doping in order to insure that inversion of the gate doping does not occur. The source and drain regions of the NMOS transistor are marked as 2950 and 2952, and the source and drain of the n-JFET are marked as 2954 and 2956, respectively.

FIG. 30A shows the cross section of the silicon wafer after contact holes and metal connections are formed. Following the source and drain formation, the self aligned silicide formation takes place by depositing a layer of metal such as cobalt, nickel, titanium, platinum, etc. and heating the wafer to allow the metal to react with the exposed silicon surface, forming the silicide compound. The unused metal is washed away by a wet chemical etch. This is followed by deposition of a layer of oxide at temperatures below 600 C as a dielectric layer to cover the whole wafer, as shown in FIG. 30A. Contact holes 3010 are etched in the dielectric layer. Metallic alloys in single or multiple layers are deposited over the wafer and they are patterned by a photolithographic process, followed by etching of the metal layer to form interconnects from the transistors shown as object 3020. The layout of the NMOS and n-JFET is shown in FIG. 30B. The source, drain, and gate regions of the NMOS transistor are marked as 3050 and 3051, and 3054. Their respective contact holes are marked as 3060, 3061 and 3064. Similarly, source, drain, and gate regions of the n-JFET are marked as objects 3052, 3053, and 3055, and their contact holes are marked as 3062, 3063, and 3065, respectively. 

1. A junction field effect transistor (JFET), comprising: a source region of a first conductivity type; a drain region of the first conductivity type which is spaced apart from the source region; a channel region of the first conductivity type which is located between the source and drain regions, wherein the channel region has a maximum length of less than 100 nm; a gate region of a second conductivity type which is formed on top of the channel region; a gate electrode region of the second conductivity type which overlays the gate region, wherein the gate electrode region comprises a high band gap material; and wherein the high band gap material facilitates a faster switching speed and lower power consumption of the JFET as compared to a different JFET that does not use the high band gap material in the gate electrode region.
 2. The JFET of claim 1, wherein the high band gap material comprises silicon carbide.
 3. The JFET of claim 1, wherein the high band gap material comprises silicon-germanium carbide.
 4. The JFET of claim 1, wherein the high band gap material comprises one of 3C, 4H, and 6H phases of silicon-carbide.
 5. The JFET of claim 1, wherein the high band gap material comprises various compound semiconductors selected from the group of gallium, aluminum, arsenide, and phosphide.
 6. The JFET of claim 1, wherein the high band gap material increases a forward bias voltage at a gate-to-channel junction, so that a higher power supply voltage can be applied to the JFET resulting in the faster switching speed.
 7. The JFET in claim 6, wherein the higher power supply voltage comprises about 0.65 volts as compared to 0.5 volts for the different JFET that does not use the high band gap material in the gate electrode region.
 8. The JFET of claim 1, wherein the high band gap material reduces the leakage current of a gate-to-channel junction, when a gate-channel diode is weakly forward biased during the ON state of the JFET, resulting in lower power dissipation.
 9. The junction field effect transistor of claim 1, wherein the gate electrode region is substantially aligned with the gate region.
 10. The junction field effect transistor of claim 1, wherein the channel region is substantially aligned with the gate region.
 11. The junction field effect transistor of claim 1, wherein the channel region is substantially aligned with the gate electrode region.
 12. The JFET of claim 1, wherein the alignment of the gate region with the gate electrode region reduces the capacitance of the junction field effect transistor.
 13. The JFET of claim 1, wherein the channel region and the gate region are formed in a well region comprised in a substrate; the well region comprising the second conductivity type; the substrate comprising the first conductivity type.
 14. The JFET of claim 1, wherein the channel region and the gate region are formed in an epitaxially deposited layer of high mobility material comprising silicon-germanium alloy.
 15. The JFET of claim 1, wherein the JFET comprising an enhancement-mode transistor.
 16. The JFET of claim 1, further comprising: a source electrode region of the first conductivity type which overlays the source region; and a drain electrode region of the first conductivity type which overlays the drain region; the source and drain electrode regions comprising the high band gap material.
 17. The junction field effect transistor of claim 16, wherein the source electrode region, the drain electrode region, and the gate electrode region have substantially coplanar surfaces.
 18. The JFET of claim 17, further comprising: a gate contact region, formed on the gate electrode region and in ohmic contact with the gate region; a source contact region, formed on the source electrode region and in ohmic contact with the source region; and a drain contact region, formed on the drain electrode region and in ohmic contact with the drain region; wherein the gate, source, and drain contact regions comprise silicide.
 19. The JFET of claim 1, wherein: the source region comprises a first source portion and a second source portion; and the first source portion connects the second source portion and the channel region.
 20. The JFET of claim 19, wherein the first source portion has an impurity concentration that is doped independently of the second source portion.
 21. The JFET of claim 20, wherein the first drain portion has an impurity concentration that is doped independently of the second drain portion.
 22. The JFET of claim 1, wherein: the drain region comprises a first drain portion and a second drain portion; and the first drain portion connects the second drain portion and the channel region.
 23. A junction field effect transistor, comprising: a semiconductor substrate; a source region of a first conductivity type which is formed in the substrate; a drain region of the first conductivity type which is formed in the substrate and spaced apart from the source region; a channel region of the first conductivity type which is located between the source and drain regions, wherein the channel region has a maximum length of less than 100 nm; a gate electrode region of a second conductivity type which overlays the semiconductor substrate, wherein at least a portion of the gate electrode region comprises a polycrystalline alloy comprising at least silicon and carbon; and a gate region of the second conductivity type which is formed in the substrate.
 24. The junction field effect transistor of claim 23, wherein the polycrystalline alloy further comprises germanium.
 25. The junction field effect transistor of claim 23, wherein the polycrystalline alloy comprises one of 3C, 4H, and 6H phases of silicon-carbide.
 26. The junction field effect transistor of claim 23, wherein the polycrystalline alloy of the gate electrode region increases the forward bias voltage at a p-n junction formed at an interface between the gate region and the channel region.
 27. The junction field effect transistor of claim 23, wherein the gate electrode region comprises a plurality of polycrystalline alloy layers.
 28. The junction field effect transistor of claim 23, further comprising: a source electrode region of the first conductivity type which overlays the semiconductor substrate and comprises polycrystalline silicon; and a drain electrode region of the first conductivity type which overlays the semiconductor substrate and comprises polycrystalline silicon.
 29. The junction field effect transistor of claim 28, wherein at least a portion of the source region comprises impurities that were diffused from the source electrode region.
 30. The junction field effect transistor of claim 28, wherein at least a portion of the drain region comprises impurities that were diffused from the drain electrode region.
 31. The junction field effect transistor of claim 28, wherein at least a portion of the source electrode region comprises a polycrystalline alloy comprising at least silicon and carbon.
 32. The junction field effect transistor of claim 28, wherein at least a portion of the drain electrode region comprises a polycrystalline alloy comprising at least silicon and carbon.
 33. The junction field effect transistor of claim 28, further comprising a source contact region formed on the source electrode region and in ohmic contact with the source region.
 34. The junction field effect transistor of claim 28, further comprising a drain contact region formed on the drain electrode region and in ohmic contact with the drain region.
 35. The junction field effect transistor of claim 23, wherein the gate electrode region is substantially aligned with the gate region.
 36. The junction field effect transistor of claim 35, wherein the alignment of the gate region with the gate electrode region reduces a capacitance of the JFET.
 37. The junction field effect transistor of claim 23, wherein a length of the gate region is less than seventy nanometers.
 38. The junction field effect transistor of claim 23, wherein the channel region is substantially aligned with the gate region.
 39. The junction field effect transistor of claim 23, wherein a length of the channel is less than seventy nanometers.
 40. The junction field effect transistor of claim 23, wherein: the first conductivity type comprises n-type; and the second conductivity type comprises p-type.
 41. The junction field effect transistor of claim 23, wherein: the first conductivity type comprises p-type; and the second conductivity type comprises n-type.
 42. The junction field effect transistor of claim 23, further comprising a well region formed in the semiconductor substrate; wherein: the source region, the drain region, the gate region, and the channel region are formed in the well region; the semiconductor substrate comprises the first conductivity type; and the well region comprises the second conductivity type.
 43. The junction field effect transistor of claim 42, further comprising an insulating region formed in the semiconductor substrate and surrounding at least a portion of the well region.
 44. The junction field effect transistor of claim 23, further comprising a gate contact region formed on the gate electrode region and in ohmic contact with the gate region.
 45. The junction field effect transistor of claim 23, wherein at least one of the channel region and the gate region are formed of epitaxially deposited silicon-germanium alloy material or epitaxially deposited silicon-germanium-carbide alloy material.
 46. The junction field effect transistor of claim 23, wherein the transistor comprises an enhancement-mode transistor.
 47. The junction field effect transistor of claim 23, wherein the gate region comprises impurities that were diffused from the gate electrode region.
 48. The junction field effect transistor of claim 23, wherein the polycrystalline alloy further comprises at least one of: gallium, aluminum, arsenide, and phosphide.
 49. An electronic circuit comprising one or more devices wherein at least one device in the electronic circuit comprises a junction field effect transistor that comprises: a source region of a first conductivity type; a drain region of the first conductivity type which is spaced apart from the source region; a channel region of the first conductivity type which is located between the source and drain regions, wherein the channel region has a maximum length of less than 100 nm; a gate region of a second conductivity type which is formed on top of the channel region; a gate electrode region of the second conductivity type which overlays the gate region, wherein the gate electrode region comprises a high band gap material; and wherein the high band gap material facilitates a faster switching speed and lower power consumption of the JFET as compared to a different JFET that does not use the high band gap material in the gate electrode region.
 50. The electronic circuit of claim 49, wherein the high band gap material comprises silicon carbide.
 51. The electronic circuit of claim 49, wherein the high band gap material comprises silicon-germanium-carbide.
 52. The electronic circuit of claim 49, wherein the high band gap material comprises one of 3C, 4H, and 6H phases of silicon-carbide.
 53. The electronic circuit of claim 49, wherein the high band gap material comprises various compound semiconductors selected from the group of gallium, aluminum, arsenide, and phosphide.
 54. The electronic circuit of claim 49, wherein the high band gap material increases a forward bias voltage at a gate-to-channel junction, so that a higher power supply voltage can be applied to the JFET resulting in the faster switching speed.
 55. The electronic circuit in claim 54, wherein the higher power supply voltage comprises about 0.65 volts as compared to 0.5 volts for the different JFET that does not use the high band gap material in the gate electrode region.
 56. The electronic circuit of claim 49, wherein the high band gap material reduces the leakage current of a gate-to-channel junction, when a gate-channel diode is weakly forward biased during the ON state of the JFET, resulting in lower power dissipation.
 57. The electronic circuit of claim 49, wherein the JFET comprising an enhancement-mode transistor. 